Physically based modeling of two-dimensional and three-dimensional implantation profiles: Influence of damage accumulation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 440-446

  Murthy, C S ^a   Posselt, M ^b   Feudel, T ^c  

^a IBM   (United States)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342407460     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589828     Document Type: Article

References (12)

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