Double-level Cu inlaid interconnects with simultaneously filled via plugs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1107-1110

  Minamihaba, Gaku ^a   Iijima, Tadashi ^a   Shimooka, Yoshiaki ^a   Tamura, Hitoshi ^a   Kawanoue, Takashi ^a   Hirabayashi, Hideaki ^a   Sakurai, Naoaki ^a   Ohkawa, Hideki ^a   Obara, Takashi ^a   Egawa, Hidemitu ^a   Idaka, Toshiaki ^a   Kubota, Takeshi ^a   Shimizu, Toshio ^a   Koyama, Mitsutoshi ^a   Ooshima, Jiro ^a   Suguro, Kyoichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CMP; Contacts; Cu; Diffusion barrier; Electrical properties; Electromigration; Inlaid interconnects; Multilevel interconnections; WSiN; XeCl excimer laser annealing

Indexed keywords

ACTIVATION ENERGY; CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTROMIGRATION; EXCIMER LASERS; SILICON WAFERS; SPUTTERING; TUNGSTEN COMPOUNDS; ULSI CIRCUITS;

CHEMICAL MECHANICAL POLISHING; DIFFUSION BARRIER; DOUBLE LEVEL COPPER INTERCONNECTION PROCESS; INLAID INTERCONNECTS; MULTILEVEL INTERCONNECTIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TUNGSTEN SILICON NITRIDE;

COPPER;

EID: 0030078871     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1107     Document Type: Article

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