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IEEE Photonics Technology Letters

Volumn 11, Issue 8, 1999, Pages 961-963

11.5-W CW 1.83-μm diode laser array

(7) Maiorov, M a Menna, R b Khalfin, V b Milgazo, H b Matarese, R b Garbuzov, D b Connolly, J b

a GOODRICH CORPORATION (United States)

b SARNOFF CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; HEAT SINKS; HETEROJUNCTIONS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INFRARED COUNTERMEASURES; LASER ARRAYS;

SEMICONDUCTOR LASERS;

EID: 0032657694 PISSN: 10411135 EISSN: None Source Type: Journal
DOI: 10.1109/68.775313 Document Type: Article

Times cited : (12)

References (6)

1
- 0345319503
- GaSb-based semiconductor lasers in the 4-μm band
- H. K. Choi, G. W. Turner, and H. Q. Le, "GaSb-based semiconductor lasers in the 4-μm band," Inst. Phys. Conf. Ser., vol. 144, pp. 1-7, 1995.
- (1995) Inst. Phys. Conf. Ser. , vol.144 , pp. 1-7
- Choi, H.K.¹ Turner, G.W.² Le, H.Q.³

2
- 0032576486
- Above-room-temperature optically pumped midinfrared W lasers
- W. W. Bewley, C. L. Felix, E. H. Aifer, I. Vurgaftman, L. J. Olafsen, J. R. Meyer, H. Lee, R. U. Martinelli, J. C. Connolly, A. R. Sugg, G. H. Olsen, M. J. Yang, B. R. Bennett, and B. V. Shanabrook, "Above-room-temperature optically pumped midinfrared W lasers," Appl. Phys. Lett., vol. 73, pp. 3833-3835, 1998.
- (1998) Appl. Phys. Lett. , vol.73 , pp. 3833-3835
- Bewley, W.W.¹ Felix, C.L.² Aifer, E.H.³ Vurgaftman, I.⁴ Olafsen, L.J.⁵ Meyer, J.R.⁶ Lee, H.⁷ Martinelli, R.U.⁸ Connolly, J.C.⁹ Sugg, A.R.¹⁰ Olsen, G.H.¹¹ Yang, M.J.¹² Bennett, B.R.¹³ Shanabrook, B.V.¹⁴

3
- 0029711097
- High power separate confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide
- D. Garbuzov, J. Abeles, N. Morris, P. Gardener, A. Triano, M. Harvey, D. Gilbert, and J. C. Connolly, "High power separate confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide," Proc. SPIE, vol. 2682, pp. 20-26, 1996.
- (1996) Proc. SPIE , vol.2682 , pp. 20-26
- Garbuzov, D.¹ Abeles, J.² Morris, N.³ Gardener, P.⁴ Triano, A.⁵ Harvey, M.⁶ Gilbert, D.⁷ Connolly, J.C.⁸

4
- 0030219135
- 1.5 μm Wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power
- D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, "1.5 μm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power," Electron. Lett., vol. 32, pp. 1717-1719, 1996.
- (1996) Electron. Lett. , vol.32 , pp. 1717-1719
- Garbuzov, D.¹ Xu, L.² Forrest, S.R.³ Menna, R.⁴ Martinelli, R.⁵ Connolly, J.C.⁶

5
- 0031548531
- 4 W quasi CW output power from 2 μm AlGaAsSb/InGaAsSb single quantum well broadened waveguide laser diodes
- D. Garbuzov, R. Martinelli, H. Lee, R. Menna, P. York, L. DiMarco, M. Harvey, R. Matarese, S. Narayan, and J. C. Connolly, "4 W quasi CW output power from 2 μm AlGaAsSb/InGaAsSb single quantum well broadened waveguide laser diodes," Appl. Phys. Lett., vol. 70, pp. 2931-2933, 1997.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2931-2933
- Garbuzov, D.¹ Martinelli, R.² Lee, H.³ Menna, R.⁴ York, P.⁵ DiMarco, L.⁶ Harvey, M.⁷ Matarese, R.⁸ Narayan, S.⁹ Connolly, J.C.¹⁰

6
- 0027701767
- 8.5 W CW 2.0 μm InGaAsP laser diodes
- J. Major, J. S. Osinski, and D. F. Welch, "8.5 W CW 2.0 μm InGaAsP Laser Diodes," Electron. Lett., vol. 29, pp. 2112-2113, 1993.
- (1993) Electron. Lett. , vol.29 , pp. 2112-2113
- Major, J.¹ Osinski, J.S.² Welch, D.F.³

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