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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 997-1001

Depth profiling of nitrogen implanted into Si/C and Zr/C bilayers with nuclear reaction analysis

(5) Miyagawa, Y a Nakao, S a Wielunski, L S b Hasegawa, H c Miyagawa, S a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b CSIRO (Australia)

c Yamagata Research Institue of Technology (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; COMPUTER SIMULATION; ION IMPLANTATION; MONTE CARLO METHODS; MULTILAYERS; NUCLEAR PHYSICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM;

BILAYERS; DEPTH PROFILING; DIAMOND LIKE CARBON; GLASSY CARBON; NITROGEN IMPLANTATION; NUCLEAR REACTION ANALYSIS;

NITROGEN;

EID: 0033891222 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(99)00936-2 Document Type: Article

Times cited : (3)

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