Near-infrared intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1285-1291

  Asano, Takashi ^a   Noda, Susumu ^a   Abe, Tomoki ^a   Sasaki, Akio ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

InGaAs AlAs; Intersubband transition; Near infrared absorption; Quantum well

Indexed keywords

EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ELECTROREFLECTANCE MEASUREMENT; INFRARED ABSORPTION SPECTROSCOPY; INTERSUBBAND TRANSITION; NEAR INFRARED ABSORPTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030080520     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1285     Document Type: Article

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