High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation

IEEE Electron Device Letters

Volumn 21, Issue 3, 2000, Pages 127-129

  Chang, Sun Jay ^a   Chang, Chun Yen ^a   Chao, Tien Sheng ^b   Huang, Tiao Yuan ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POWER SUPPLIES TO APPARATUS; INDIUM; ION IMPLANTATION; OXIDATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; THRESHOLD VOLTAGE;

BODY EFFECT FACTOR; DYNAMIC THRESHOLD VOLTAGE MOSFET; INDIUM CHANNEL IMPLANTATION; RAPID THERMAL OXIDATION; SHALLOW TRENCH ISOLATION; SUPER STEEP RETROGRADE;

MOSFET DEVICES;

EID: 0033889048     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.823577     Document Type: Article

References (7)

1. F. Assaderaghi et al., "A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation," in IEDM Tech. Dig., 1994, p. 809.
2. C. Wann et al., "Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET," in IEDM Tech. Dig., 1996, p. 113.
3. H. Kotaki et al., "Novel bulk dynamic threshold MOSFET (B-DTMOS) with advanced isolation (SITOS) and gate to shallow-well contact (SSS-C) processes for ultra low power dual gate CMOS," in IEDM Tech. Dig., 1996, p. 459.
4. max enhancement of dynamic threshold-voltage MOSFET (DTMOS) under ultra-low supply voltage," in IEDM Tech. Dig., 1997, p. 423.
5. A. Shibata et al., "Ultra low power supply voltage (0.3 V) operation with extreme high speed using bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced fast-signal-transmission shallow well," in Proc. Symp. VLSI Tech. Dig. Tech., 1998, p. 76.
6. K. Ohe et al., "The inverse-narrow-width effect of LOCOS isolated n-MOSFET in high-concentration p-well," IEEE Electron Device Lett., vol. 13, p. 636, Dec. 1992.
7. P. Bouillon, R. Gwoziecki, and T. Skotnicki, "Anomalous short channel effects in indium implanted nMOSFETs," in IEDM Tech. Dig., 1997, p. 231.