Anomalous short channel effects in Indium implanted nMOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 231-234

  Bouillon, P ^a   Gwoziecki, R ^a   Skotnicki, T ^a  

^a France Telecom   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERSTITIAL ASSISTED DEACTIVATION; SHORT CHANNEL EFFECTS;

SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

MOSFET DEVICES;

EID: 84886447959     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)