Fmax enhancement of dynamic threshold-voltage MOSFET (DTMOS) under ultra-low supply voltage

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 423-426

  Tanaka, Tetsu ^a   Momiyama, Youichi ^a   Sugii, Toshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT SILICIDE TECHNOLOGY; LIGHTLY DOPED DRAIN (LDD) IMPLANTATION;

CAPACITANCE; COBALT; ELECTRIC RESISTANCE; GATES (TRANSISTOR); OXIDATION; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 84886448027     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)