Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications

Microelectronics Reliability

Volumn 40, Issue 2, 2000, Pages 207-230

  Vendrame, Loris ^a,c   Pavan, Paolo ^b   Corva, Giulio ^a,c   Nardi, Alessandra ^a   Neviani, Andrea ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FAILURE ANALYSIS; INTERFACES (MATERIALS); IONIZATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SWITCHES; SILICA; SPURIOUS SIGNAL NOISE;

BIPOLAR JUNCTION TRANSISTORS (BJT);

BIPOLAR TRANSISTORS;

EID: 0033882579     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00217-6     Document Type: Article

References (74)

1. fe degradation: causes and circuit solution. In: Bipolar/ BiCMOS Circuits and Technology Meeting. 1994. p. 197-200.
2. Warnock JD. Silicon bipolar device structures for digital applications: tecnology trends and future directions. IEEE Trans on Electron Devices 1995;42(3):377-89.
3. Post IRC, Ashburn P, Wolstenholme GR. Polysilicon emitters for bipolar transistors: a review and re-evalutation of theory and experiment. IEEE Trans on Electron Devices 1992;39(7):1717-31.
4. Ning TH, Tang DL. Bipolar trends. Proc of the IEEE Trans 1986;74(12):1669-77.
5. Nakamura T, Nishizawa H. Recent progress in bipolar transistor technology. IEEE Trans on Electron Devices 1995;42(3):390-7.
6. Muller RS, Kamins TI. Device electronics for intgrated circuits. New York: Wiley, 1977.
7. Siabi-Sharivar N, Redman-White W, Ashburn P, Post I. Modeling and characterization of noise of polysilicon emitter bipolar transistors. In: Proc. IEEE IRPS. 1990. p. 236-8.
8. Solomon DM, Tang DD. Bipolar circuit scaling. In: 1979. IEEE Int'l Solid State Circuits Conf. 1979. p. 86-7.
9. Rossel GP, Dutton RW. Scaling rules for bipolar transistors on BiCMOS circuits. IEDM Tech Dig, 1989, pp. 795-798.
10. Marty A, Degors N, Kirtsch J, Chantre A, Nouailhat A. Performance of a CMOS compatibile polysilicon bipolar transistors with high energy ion implanted collector. Microelectronic Engineering 1992;19:547-50.
11. Giroult-Matlakowski G, Degors N, Marty A, Chantre A, Nouailhat A. Influence of the interfacial oxide layer on the gain of polycrystalline silicon emitter bipolar transistors processed in VLSI BiCMOS technology. Electronics Letters 1990;26(14):1002-4.
12. Alvarez AR. BiCMOS technology and applications. Dordrecht: Kluwer Academic Publishers, 1989.
13. Nouailhat A, Giroult G, Delpech P, Gerodolle A. Development of advanced CMOS-compatible bipolar transistors for BiCMOS technology. IEEE Trans on Electron Devices 1991;38:107-10.
14. Vendrame L, Gravier T, de Berranger E, Kirtsch J, Laurens M, Mouis M, Chantre A. Optimisation of a link base implant for reducing the access base resistance of single-poly quasi self-aligned bipolar transistors. In: Proc. ESSDERC 96, Bologna, Italy, 9-11 Sept. 1996. p. 803-6.
15. Niel S, Gravier T, Granier A, Grouillet A, Kirtsch J, Chantre A, Vincent G. Large-angle-tilt-implanted-base (LATIB) for walled-emitter bipolar transistors. In: Proc. ESSDERC 96, Bologna, Italy, 9-11 Sept. 1996. p. 799-802.
16. Tang DD, Hackbart E. Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design. IEEE Trans on Electron Devices 1988;35(12):2101-7.
17. Joshi SP, Lahri R, Lage C. Poly emitter bipolar hot carrier effects in an advanced BiCMOS technology, IEDM Tech Dig, 1987, pp. 182-185.
18. Burnett D, Hu C. Hot-carrier degradation in bipolar transistors at 300 and 110 K effect on BiCMOS inverter performance. IEEE Trans on Electron Devices 1990;37:1171-3.
19. Niitsu Y, Yamaura K, Momose H, Maeguchi K. Anomalous current gain degradation in bipolar transistor. In: 29th IEEE Inter. Reliability Physics Symposium. 1991. p. 193-9.
20. Maugain F, Papadas C, Ghibaudo G, Gambetta N, Mortini P. On the degradation features of poly-emitter n-p-n BJT's after hot-carrier injection. IEDM Tech Dig, 1995, 266-270.
21. Hackbart E, Tang DD. Inherent and stress-induced leakage in heavily doped silicon junctions. IEEE Trans on Electron Devices 1988;35(12):2108-18.
22. Burnett D, Hu C. Modeling hot carrier effects in polysilicon emitter bipolar transistors. IEEE Trans on Electron Devices 1988;35(12):2238-44.
23. Chantre A, Festes G, Matlakowski G, Nouailhat A. An investigation of nonideal base currents in advanced self-aligned 'etched-poysilicon' emitter bipolar transistors. IEEE Trans on Electron Devices 1991;38(6):1354-61.
24. Hackbart E, Li GP, Chen TC. Tunneling component in polysilicon self-aligned bipolar transistors. IEEE Trans on Electron Devices 1986;33:1853.
25. Li GP, Hackbarth E, Chen TC. Identification and implication of a perimeter tunnelling current component in advanced self-aligned bipolar transistors. IEEE Trans on Electron Devices 1988;35(1):89-95.
26. Neviani A, Pavan P, Tommasin T, Nardi A, Chantre A, Stucchi M, Vendrame L, Zanoni E. Hot-carrier degradation and oxide charge build-up in self-aligned etched-polysilicon npn bipolar transistors. In: Proc. ESSDERC, Bologna, Italy, 9-11 Sept. 1996. p. 979-82.
27. Chantre A, Festes G, Matlakowski G, Nouailhat A. Identification of a corner tunneling current component in an advanced CMOS-compatible bipolar transistors. IEEE Trans on Electron Devices 1991;38:107-10.
28. Burnett D, Hu C. Hot carrier reliability of bipolar transistor. In: Proc. IEEE IRPS. 1990. p. 164-9.
29. Sze SM. Physic of semiconductor devices. New York: Wiley, 1981.
30. Neugroschel A, Sah CT, Carroll MS. Current-acceleration for rapid time-to-failure determination of bipolar junction transistors under emitter-base reverse-bias stress. IEEE Trans on Electron Devices 1995;42(7):1380-3.
31. Neugroschel A, Sah CT, Carroll MS. Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress. IEEE Trans on Electron Devices 1996;43(8):1286-90.
32. Neviani A, Pavan P, Nardi A, Chantre A, Vendrame L, Zanoni E. Hot-carrier degradation and oxide charge build-up in self-aligned etched-polysilicon npn bipolar transistors. IEEE Trans on Electron Devices 1997;44(11):2059-63.
33. Mounib A, Ghibaudo G, Pogany D, Chroboczeck JA. Aging and noise in the Si bipolar junction transistors. In: Van der Ziel Symp., St. Louis, 27 May. 1994.
34. Gopi PK, Li GP, Sonek GJ. New degradation mechanism associated with hydrogen in bipolar transistors under hot carrier stress. Applied Physics Letters 1993;63(9):1237-9.
35. Quon D, Gopi PK, Soneck GJ, Li GP. Hot carrier induced bipolar transistor degradation due to base dopant compensation by hydrogen: theory and experiment. IEEE Trans on Electron Devices 1994;41:1824-30.
36. Wurzer H, Mahnkopf R, Klose H. Annealing of degraded npn-transistors-mechanisms and modeling. IEEE Trans on Electron Devices 1994;41(4):533-8.
37. Sun C, Reinhard DK, Grotjohn TA, Huang CJ, Yu CCW. Hot-electon-induced degradation and post stress recovery of bipolar transistor gain and noise characteristics. IEEE Trans on Electron Devices 1992;39(9):2178-80.
38. Huang CT, Grotjhon TA, Sun CJ, Reinhard DK, Yu C-CW. Temperature dependence of hot-electron degradation in bipolar transistors. IEEE Trans on Electron Devices 1993;40:1669-74.
39. Momose HS, Iwai H. Analysis of the temperature dependence of hot-carrier-induced degradation in bipolar transistors for BiCMOS. IEEE Trans on Electron Devices 1994;41:978-87.
40. 2 interface in degradation effects for high-speed bipolar transistors. In: MRS, San Francsico, CA, April. 1995.
41. Pogany D, Chroboczeck JA, Ghibaudo G. RTS noise mode for degraded downscaled CMOS compatible Si bipolar transistors. In: International Workshop on Noise and Reliability of Semiconductor Devices, Brno (CZ), 18-20 July. 1995. p. 18-20.
42. Dreyer ML, Durec J. Low frequency 1/f noise and current gain degradation BiCMOS n-p-n transistors. In: Proc. IEEE IRPS. 1992. p. 95-101.
43. Pogany D, Guillot G. An alternative RTS noise model for forward biased pn junctions. In: ICNF 95, 29 May-3 June. 1995.
44. Jang SL, Chang PC. Degradation of npn bipolar junction transistor under dynamic high current stress. Solid-State Electronics 1994;37(2):205-301.
45. Tang DD, Hackbart E, Chen TC. On the very-high-current degradations on Si n-p-n transistors. IEEE Trans on Electron Devices 1990;37(7):1698-706.
46. Neugroschel A, Sah CT, Carroll MS. Accelerated reverse emitter-base bias stress methodologies and time-to-failure application. IEEE Electron Device Letters 1996;17:112-4.
47. Li GP, Petersen S. Hot carrier effects in advanced self-aligned bipolar transistors. IEDM Tech Dig, 1985, pp. 22-24.
48. Jenkins KA, Cressler JD, Warnock JD. Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stresses. IEDM Tech Dig, 1991, pp. 873-876.
49. fe degradation in BiCMOS transistors. In: Proc. IEEE IRPS. 1992. p. 58-62.
50. Kosier SL, deLaus M, Wei A, Schrimpf RD, Martinez A. Simple technique for improving the hot-carrier reliability of single-poly bipolar transistors. In: Bipolar/ BiCMOS Circuits and Technology Meeting. 1994. p. 205-8.
51. Burnett JD, Lage C, Hayden JD. Bipolar reliability optimization through surface compensation of the base profile. In: Proc. IEEE IRPS. 1990. p. 107-11.
52. Vendrame L, Gravier T, Kirtsch J, Monroy A, Chantre A. Reliability improvement of single-poly quasi self-aligned BiCMOS BJTs using base surface arsenic compensation. Microelectronic Reliability 1996;36(11):1827-30.
53. fe degradation in bipolar output drivers. IEEE Trans on Electron Devices 1995;42:573-4.
54. Wada T, Sugimoto M, Ajiki T. Electromigration in bipolar n-p-n transistors. Solid-State Electronics 1988;31(9):1409-12.
55. Chen TC, Kaya C, Ketchen MB, Ning TH. Reliability analysis of self-aligned bipolar transistor under forward active current stress. IEDM Tech Dig, 1986, pp. 650-653.
56. Canali C, Fantini F, Vanzi M, Soncini G, Zanoni E. Bipolar schottky logic device failure modes due to contact metallurgical degradation. Microelectronics and Reliability 1982;22:1155-60.
57. Canali C, Fantini F, Zanoni E, Giovannetti A, Brambilla B. Failures induced by electromigration in ECL 100 K devices. Microelectronics and Reliability 1984;24:77-80.
58. Zhao J, Li GD, Liao KY, Chin MR, Sun JY-C. Observation of electromigration of hydrogen in polycrystalline silicon using poly emitter bipolar transistors. Applied Physics Letters 1993;62:2950-2.
59. Zhao J, Li GP, Liao KY, Chin MR, Sun YC. On the effects of hydrogen in p-n-p transistors under forward current stress in a C-BiCMOS technology. IEEE Electron Device Letters 1993;14:4-6.
60. Carroll MS, Neugroschel A, Sah C-T. Degradation of silicon bipolar junction transistors at high forward current densities. IEEE Trans on Electron devices 1997;44(1):110-7.
61. Tang DD, Wong C, McFarland PA. Metal migration into polysilicon emitter after very high current stress. IEEE Electron Device Letters 1992;13(5):265-6.
62. Watchnik RA, Bucelot TJ, Li GP. Degradation of bipolar transistors under high current stress at 300 K. Journal of Applied Physics 1988;63(9):4734-40.
63. Lu P-F, Chen T-C. Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors. IEEE Trans on Electron Devices 1989;36(6):1182-8.
64. Lu P-F. Effect of reverse base current on bipolar and BiCMOS circuit. IEEE Trans on Electron Devices 1992;39(8):1902-8.
65. Liu TM, Chiu T-Y, Archer VD, Kim HH. Characteristics of impact-ionization current in the advanced self-aligned polysilicon-emitter bipolar transistor. IEEE Trans on Electron Devices 1991;38(8):1845-51.
66. Zanoni E, Crabbe EF, Stork JMC, Pavan P, Verzellesi G, Vendrame L, Canali C. Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced BJT's. IEEE Electron Device Letters 1993;14(2):69-71.
67. Verzellesi G, Vendrame L, Pavan P, Chantre A, Marty A, Cavone M, Rivoir R, Zanoni E. A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors. IEDM Tech Dig, 1992, pp. 413-416.
68. Reisch M. On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime-modeling and applications, IEEE Trans on Electron Devices 1992;39(6):1398-1409.
69. Verzellesi G, Baccarani G, Canali C, Pavan P, Vendrame L, Zanoni E. Prediction of impact-ionization-induced snap back in advanced Si npn BJT's by means of a nonlocal analytical model for the avalanche multiplication factor. IEEE Trans on Electron Devices 1993;40(12):2296-300.
70. Neugroschel A, Sah CT, Carroll MS, Pfaff KG. Base current relaxation transient in reverse emitter-base bias stressed silicon bipolar junction transistors. IEEE Trans on Electron Devices 1997;44(5):792-800.
71. Decoutere S, Simoen E, Vancuyck G, Deferm L, Claeys C. A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter Bipolar transistors. In: IEEE BCTM '97. 1997. p. 104-7.
72. Scarpulla J, Dunkley J, Lemke S, Sabin E, Young M. Maximum safe reverse emitter voltage in Bipolar transistors for reliable 10 year operation. In: Proc. IEEE IRPS. 1997. p. 34-43.
73. Neugroschel A, Sah CT, Ford JM, Steele J, Tang R, Stein C. Comparison of time to failure of GeSi and Si bipolar transistors. IEEE Electron Device Letters 1996;17(5):211-3.
74. Vendrame L, Zabotto E, Fabbro AD, Zanini A, Verzellesi G, Zanoni E, Chantre A, Pavan P. Influence of impact-ionization-induced base current reversal on bipolar transistor parameters. IEEE Trans on Electron Devices 1995;42(2):1636-46.