Maximum safe reverse emitter voltage in bipolar transistors for reliable 10 year operation

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 34-43

  Scarpulla, John ^a   Dunkley, James ^a   Lemke, Steven ^a   Sabin, Edwin ^a   Young, Mike ^a  

^a Silicon Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; GAIN CONTROL; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS;

CURRENT GAIN; REVERSE EMITTER VOLTAGE;

BIPOLAR TRANSISTORS;

EID: 0030683899     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)