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Volumn , Issue , 1997, Pages 34-43
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Maximum safe reverse emitter voltage in bipolar transistors for reliable 10 year operation
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
DEGRADATION;
GAIN CONTROL;
RELIABILITY;
SEMICONDUCTOR DEVICE MODELS;
STATISTICAL METHODS;
CURRENT GAIN;
REVERSE EMITTER VOLTAGE;
BIPOLAR TRANSISTORS;
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EID: 0030683899
PISSN: 00999512
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (8)
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