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Journal of Materials Science Letters

Volumn 19, Issue 6, 2000, Pages 529-531

Investigation on the epitaxial growth of GaN film on Si(111) substrate

(3) Zhang, H X a Ye, Z Z a Zhao, B H a

a ZHEJIANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SINGLE CRYSTALS; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033880734 PISSN: 02618028 EISSN: None Source Type: Journal
DOI: 10.1023/A:1006766006826 Document Type: Article

Times cited : (2)

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