Measurement of Junction Temperature of an AlGaAs/GaAs Heterojunction Bipolar Transistor Operating at Large Power Densities

IEEE Transactions on Electron Devices

Volumn 42, Issue 2, 1995, Pages 358-360

  Liu, William ^a   Yuksel, Ayca ^b  

^a TEXAS INSTRUMENTS   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; GAIN MEASUREMENT; GATES (TRANSISTOR); HEAT LOSSES; HEAT RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE MEASUREMENT; VOLTAGE MEASUREMENT;

COLLECTOR CURRENT; ELECTRICAL METHOD; HIGH POWER DENSITIES; JUNCTION TEMPERATURE; OPERATING TEMPERATURES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029247487     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370056     Document Type: Article

References (7)

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