Thermal Resistance Measurements for AlGaAs/GaAs Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 38, Issue 6, 1991, Pages 1553-1554

  Adlerstein, Michael G ^a   Zaitlin, Mark P ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL CONDUCTIVITY - MEASUREMENTS;

SINGLE-EMITTER HBT; THERMAL RESISTANCE;

TRANSISTORS, BIPOLAR;

EID: 0026172210     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.81653     Document Type: Article

References (2)

1. A. Haji-Sheikh, “Peak temperature in high-power chips,” IEEE Trans. Electron Devices, vol. 37, no. 4, pp. 902–907, Apr. 1990.
2. E. F. Steigmeier and I. Kudman, Phys. Rev., vol. 132, p. 508, 1963.