The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 668-675

  Roberts, J S ^a   David, J P R ^a   Smith, L ^b   Tihanyi, P L ^c  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Epichem Limited   (United Kingdom)

^c PLT Technology Inc   (United States)

Author keywords

Diode laser; Trimethylindium

Indexed keywords

CRYSTAL IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

TRIMETHYLINDIUM;

QUANTUM WELL LASERS;

EID: 0032477119     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00665-4     Document Type: Article

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