Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 nm and 840 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3628, Issue , 1999, Pages 19-28

  Erbert, G ^a   Bugge, F ^a   Knauer, A ^a   Maege, J ^a   Oster, A ^a   Sebastian, J ^a   Staske, R ^a   Thies, A ^a   Wenzel, H ^a   Weyers, M ^a   Trankle, G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; HIGH POWER LASERS; LASER RESONATORS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

ALUMINUM FREE QUANTUM WELLS; LARGE OPTICAL CAVITY BROADENED WAVEGUIDE; STRAINED QUANTUM WELLS;

SEMICONDUCTOR LASERS;

EID: 0032652820     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (29)