1.3μm GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer

Electronics Letters

Volumn 34, Issue 14, 1998, Pages 1427-1428

  Iwai, N ^a   Mukaihara, T ^a   Itoh, M ^a   Yamanaka, N ^a   Arakawa, S ^a   Shimizu, H ^a   Kasukawa, A ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; GRADIENT INDEX OPTICS; HETEROJUNCTIONS; LASER MODES; LEAKAGE CURRENTS; OXIDATION; REFLECTIVE COATINGS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

ALUMINUM OXIDE CONFINED INNER STRIPE (ACIS) LASERS;

QUANTUM WELL LASERS;

EID: 0032120084     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981006     Document Type: Article

References (6)

1. IWAI, N., MUKAIHARA, T., YAMANAKA, N., KUMADA, K., SHIMIZU, H., and KASUKAWA, A.: 'Low threshold current 1.3μm InAsP QW ACIS lasers', Electron. Lett., 1998, 34, pp. 890-891
2. CARACCI, S.S., KRAMES, M.R., and HOLONYAK, N., JR.: 'Long wavelength (λ ∼ 1.5μm) native-oxide-defined InAlAs-InP-InGaAsP quantum well heterostructure laser diodes', J. Appl. Phys., 1994, 75, pp. 2706-2708
3. TAKENOUCHI, H., KAGAWA, T., OHISO, Y., TADOKORO, T., and KUROKAWA, T.: 'Laterally oxidised InAlAs/InP distributed Bragg reflectors', Electron. Lett., 1995, 32, pp. 1671-1673
4. GEBRETSADIK, H., KAMATH, K., ZHOU, W.-D., and BHATTACHARYA, P.: 'Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications', Appl Phys. Lett., 1998, 72, pp. 135-137
5. NAMEGAYA, T., MATSUMOTO, N., YAMANAKA, N., IWAI, N., NAKAYAMA, H., and KASUKAWA, A.: 'Effects of well number in 1.3μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers', IEEE J. Quantum Electron., 1994, 30, pp. 578-584
6. 1-xAs grown on InP for application to long wavelength lasers', to be submitted to Jpn. J. Appl. Phys.