A comparison of the dc and rf characteristics of single and double InP/InGaAs heterojunction bipolar transistors

Canadian Journal of Physics

Volumn 74, Issue , 1996, Pages

  McKinnon, W R ^a   McAllster, S P ^a   Abid, Z ^a   Guzzo, E E ^a   Laframboise, S ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2742566201     PISSN: 00084204     EISSN: None     Source Type: Journal    
DOI: 10.1139/p96-866     Document Type: Article

References (8)

1. B. Jalali and S.J. Pearton (Editors). InP HBTs: Growth, processing, and applications. Artech House, Norwood, Mass. 1994.
2. A. Feygenson, D. Ritter, R.A. Hamm, P.R. Smith, R.K. Montgomery, R.D. Yadvish, H. Temkin, and M.B. Panish. Electron. Lett. 28, 607 (1992).
3. S.P. McAlister, Z.E. Abid, W.R. McKinnon, and M. Davies. Electron. Lett. 29, 1415 (1993).
4. W.R. McKinnon, S.P. McAlister, Z. Abid, and E.E. Guzzo. J. Appl. Phys. 79, 2771 (1996).
5. B. Ghodsian, D.L. Pulfrey, Z. Abid, and S.P. McAlister. Solid-State Electron. 38, 1275 (1995).
6. S.P. McAlister, W.R. McKinnon, Z. Abid, and E.E. Guzzo. J. Appl. Phys. 76, 2559 (1994).
7. D. Ritter, R.A. Hamm, A. Feygenson, H. Temkin, M.B. Panish, and S. Chandrasekhar. Appl. Phys. Lett. 61, 70 (1992).
8. D. Le Croissette. Transistors. Prentice-Hall, Englewood Cliffs, New Jersey. 1963.