Effect of Ar addition in ECR CH4/H2/Ar plasma etching of GaAs, InP and InGaP

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 1095-1099

  Lee, J W ^a   Pearton, S J ^a   Abernathy, C R ^a   Hobson, W S ^b   Ren, F ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; METHANE; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR PLASMAS; SURFACES;

METALLORGANIC MOLECULAR BEAM EPITAXY; OPTICAL EMISSION SPECTROSCOPY; PLASMA CHEMISTRY; REACTIVE ION ETCHING SYSTEMS; STYLUS PROFILOMETRY;

ETCHING;

EID: 0030195712     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00397-5     Document Type: Article

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