New submicron HBT IC technology demonstrates ultra-fast, low-power integrated circuits

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 1862-1868

  Hafizi, Madjid ^a,b  

^a Hughes Aircraft Co   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

CDR; Comparator; HBT; Inp; Low power 1c; Scaled technology; Ultra fast 1c

Indexed keywords

ANALOG TO DIGITAL CONVERSION; BUFFER CIRCUITS; COMPARATOR CIRCUITS; ELECTRIC CURRENTS; ELECTRIC POWER SUPPLIES TO APPARATUS; FLIP FLOP CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; PHASE LOCKED LOOPS; SEMICONDUCTING INDIUM PHOSPHIDE;

DATA RECOVERY CIRCUIT; DC CURRENT GAIN; METALLIZATION PITCH; SCALED TECHNOLOGY;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032163360     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711348     Document Type: Article

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