InP/InGaAs double-HBT technology for high bit-rate communication circuits

Electronics Letters

Volumn 33, Issue 2, 1997, Pages 149-151

  Caffin, D ^a   Bouche M ^a   Meghelli, M ^a   Duchenois, A M ^a   Launay, P ^a  

^a ORANGE LABS   (France)

Author keywords

Digital integrated circuits; Heterojunction bipolar transistors; Optical communication

Indexed keywords

BANDWIDTH; DIGITAL INTEGRATED CIRCUITS; LIGHT MODULATORS; MULTIPLEXING EQUIPMENT; OPTICAL COMMUNICATION; OPTICAL LINKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

HIGH BIT RATE COMMUNICATION CIRCUITS; HIGH SPEED OPTOELECTRONIC TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030735766     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970069     Document Type: Article

References (8)

1. max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter'. GaAs IC Symp. 95, 1995, pp. 163-166
2. KURISHIMA, K., NAKAJIMA, H., YAMAHATA, S., KOBAYASHI, T., and MATSUOKA, Y.: 'Growth, design and performance of InP-based heterostructure bipolar transistors', IEICE Trans. Electron., 1995, E78-C, (9), pp. 1171-1180
3. BAUKNECHT, R., SCHNEIBEL, H.P., SCHMID, J., and MELCHIOR. H.: 'A 12 Gbit/s laser and optical modulator driver circuit with InGaAs/ InP double heterostructure bipolar transistors'. Proc. IPRM 96, 1996, pp. 61-63
4. BANU, M., JALALI, B., HUMPHREY, D.A., MONTGOMERY, R.K., NOTTENBERG, R.N., HAMM, R.A., and PANISH, M.B.: 'Wideband HBT circuits for operation above 10GHz and power supply voltages below 5V', Electron. Lett., 1992, 28, (4), pp. 354-355
5. STANCHINA, W.E., JENSEN, J.F., WALDEN, R.H., HAFIZI, M., SUN, H.-C., LIU, T., RAGHAVAN, G., ELLIOTT, K.E., KARDOS, M., SCHMITZ, A.E., BROWN, Y.K., MONTES, M.E., and YUNG, M.: 'An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronics ICs'. GaAs IC Symp. 95, 1995, pp. 31-34
6. OHKUBO, M., IKETANI, A., IJICHI, T., and KIKUTA, T.: 'InGaAs/InP double-heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition', Appl. Phys. Lett., 1991, 59, (21), pp. 2697-2699
7. CHAU, H.F., and BEAM, E.A.: 'High-speed InP/InGaAs heterojunction bipolar transistors', Electron Device Lett., 1993, 14, (8), pp. 388-390
8. BAUKNECHT, R., DURAN, H., SCHWARTZ, M., and MELCHIOR, H.: 'InGaAs/InP double heterostructure bipolar transistors for high speed and high voltage driver circuit applications'. Proc. IPRM 93, 1993, pp. 565-568