Hydrogen stimulated destruction of Fe-B pairs in p-Si

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 383-386

  Yakimov, E B ^a   Parakhonsky, A L ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

Deep Levels; Defect Passivation; Hydrogen; Iron; Iron Boron Pairs; Silicon

Indexed keywords

HYDROGEN; IRON; IRON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON COMPOUNDS; WET ETCHING; BORON; DEEP LEVEL TRANSIENT SPECTROSCOPY; PASSIVATION; SEMICONDUCTING SILICON;

DEEP-LEVELS; DEFECT PASSIVATION; HYDROGEN DISSOCIATION; INTERSTITIAL IRON; NEAR-SURFACE LAYERS;

BORON COMPOUNDS; ETCHING;

WET CHEMICAL ETCHING;

EID: 16944362357     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.383     Document Type: Article

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