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Volumn 154, Issue , 2000, Pages 670-674

Effects of rapid thermal annealing on ripple growth in excimer laser-irradiated silicon-dioxide/silicon substrates

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; EXCIMER LASERS; LASER BEAM EFFECTS; MATHEMATICAL MODELS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS; SPUTTERING; SURFACE PHENOMENA; SURFACE TOPOGRAPHY; THERMAL EFFECTS;

EID: 0033871947     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00418-3     Document Type: Article
Times cited : (9)

References (20)
  • 8
    • 0004259685 scopus 로고
    • J.M. Poate, & J.W. Mayer. New York: Academic Press
    • Hill C. Poate J.M., Mayer J.W. Laser Annealing of Semiconductor. 1982;479-557 Academic Press, New York.
    • (1982) Laser Annealing of Semiconductor , pp. 479-557
    • Hill, C.1
  • 20
    • 85031613755 scopus 로고    scopus 로고
    • PhD thesis, The National University of Singapore
    • J.J. Yu, PhD thesis, The National University of Singapore, 1999.
    • (1999)
    • Yu, J.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.