Benefits and limitations in barrier design in InAsP/GaInP strain-balanced MQWs for improving the 1.3 μm waveguide modulator performance

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 436-439

  Mei, X B ^a   Loi, K K ^a   Chang, W S C ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTRUM ANALYSIS; STRAIN;

BARRIER DESIGN; PHOTOCURRENT SPECTRA;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030672954     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)