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12944259208
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Pakula, T.11
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13
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0343757155
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All reactions used anhydrous solvents and were performed under a nitrogen atmosphere in a glovebox
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All reactions used anhydrous solvents and were performed under a nitrogen atmosphere in a glovebox.
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14
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0342886277
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See Supporting Information for an IR spectrum of poly-4 prepared in solution by 1
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See Supporting Information for an IR spectrum of poly-4 prepared in solution by 1.
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15
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84949162404
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Kennedy, J. P.; Markowski, H. S. J. Macromol. Sci., Chem. 1967, 3, 345-370.
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Kennedy, J.P.1
Markowski, H.S.2
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16
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0343321231
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By XPS, the atomic ratio of C to Br was roughly 12:1 and close to the expected empirical ratio of 13:1 based on the polymer structure
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By XPS, the atomic ratio of C to Br was roughly 12:1 and close to the expected empirical ratio of 13:1 based on the polymer structure.
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17
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0343321229
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We obtained polymer films as thick as 1 μm using the neat monomer
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We obtained polymer films as thick as 1 μm using the neat monomer.
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18
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0343321230
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We have not yet determined the grafting density and chain lengths for the polymer chains due to the small amounts of polymer prepared on the employed flat substrates
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We have not yet determined the grafting density and chain lengths for the polymer chains due to the small amounts of polymer prepared on the employed flat substrates.
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19
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0342451876
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note
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2 for 10-30 min before exposure to a monomer solution produced films of diminished thicknesses (by ∼50% or more).
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20
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0343757153
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note
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3g An advantage of ROMP may be the possibility of forming a family of layered films by varying the sequence of exposure to a set of different norbornenyl monomers.
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21
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0031947320
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Xia, Y.; Whitesides, G. M. Angew. Chem., Int. Ed. Engl. 1998, 37, 550-575.
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Xia, Y.1
Whitesides, G.M.2
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22
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0033577008
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Lackowski, W.M.1
Ghosh, P.2
Crooks, R.M.3
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23
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0011300548
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The patterned polymer can be used as an etch resist to transfer the pattern into a Si substrate. Jeon, N. L.; Choi, I. S.; Kim, N. Y.; Harada, Y.; Finnie, K. R.; Girolami, G. S.; Nuzzo, R. G.; Laibinis, P. E.; Whitesides, G. M. Appl. Phys. Lett. 1999, 75, 4201-4203.
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Jeon, N.L.1
Choi, I.S.2
Kim, N.Y.3
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Girolami, G.S.6
Nuzzo, R.G.7
Laibinis, P.E.8
Whitesides, G.M.9
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