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Volumn 372, Issue 1-3, 1997, Pages 37-63

Faceting kinetics of stepped Si(113) surfaces: Dynamic scaling and nano-scale grooves

Author keywords

Faceting; Models of surface kinetics; Silicon; Stepped single crystal surfaces; Surface structure, morphology, roughness, and topography; X ray scattering, diffraction, and reflection

Indexed keywords

ELASTICITY; GROWTH (MATERIALS); MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHASE DIAGRAMS; QUENCHING; REACTION KINETICS; SURFACE MEASUREMENT; SURFACE PHENOMENA; SURFACE STRUCTURE; SYNCHROTRON RADIATION; X RAY DIFFRACTION;

EID: 0031077199     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01106-5     Document Type: Article
Times cited : (45)

References (95)
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    • note
    • This is the "downhill" current direction. Recently, it has been found that direct-current parallel to the surface can cause a step-bunching instability of certain stepped Si(111) surfaces, which results in non-equilibrium faceting [85,86]. The instability depends on the direction of the current [85-88], and does not occur for downhill currents on stepped Si(113) surfaces. The behavior for uphill currents, where evidence of the instability is seen, is provided elsewhere [13,89].
  • 81
    • 0004254886 scopus 로고
    • Properties of silicon
    • INSPEC, London and New York
    • Properties of Silicon. EMIS Datareviews Series No. 4 (INSPEC, London and New York, 1988).
    • (1988) EMIS Datareviews Series No. 4 , vol.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.