Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

Journal of Electronic Materials

Volumn 29, Issue 5, 2000, Pages 565-569

  Janes, D B ^a   Lee, Takhee ^a   Liu, Jia ^a   Batistuta, M ^a   Chen, Nien Po ^a   Walsh, B L ^a   Andres, R P ^a   Chen, E H ^a,b   Melloch, M R ^a   Woodall, J M ^a,b   Reifenberger, R ^a  

^a PURDUE UNIVERSITY   (United States)

^b Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH;

CURRENT-VOLTAGE SPECTROSCOPY; NANOCLUSTERS; SELF-ASSEMBLED NANOSTRUCTURES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033741986     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0046-z     Document Type: Article

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