Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

Journal of Crystal Growth

Volumn 213, Issue 1, 2000, Pages 40-50

  Hayakawa, Y ^a   Okano, Y ^a   Hirata, A ^b   Imaishi, N ^c   Kumagiri, Y ^d   Zhong, X ^e   Xie, X ^f   Yuan, B ^g   Wu, F ^h   Liu, H ^h   Yamaguchi, T ^a   Kumagawa, M ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

^d Marubeni Corporation   (Japan)

^e INSTITUTE OF SEMICONDUCTORS   (China)

^f INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^g Drilling Fluid Branch   (China)

^h CHINA ACADEMY OF SPACE TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUOYANCY; COOLING; CRYSTAL ORIENTATION; CRYSTALLIZATION; DISSOLUTION; GRAVITATIONAL EFFECTS; MELTING; MICROGRAVITY PROCESSING; PHASE INTERFACES; SEMICONDUCTING GALLIUM COMPOUNDS; SOLIDIFICATION; THERMAL EFFECTS;

GALLIUM ANTIMONIDE; INDIUM ANTIMONIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033741598     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00340-7     Document Type: Article

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