Suppression of cracks in InxGa1-xSb crystals through forced convection in the melt

Journal of Crystal Growth

Volumn 194, Issue 1, 1998, Pages 1-7

  Dutta, P S ^a   Ostrogorsky, A G ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Forced convection; InxGa1 xSb crystals; Suppression of cracks

Indexed keywords

CRACKS; CRYSTALLINE MATERIALS; FORCED CONVECTION; INDIUM ALLOYS; MIXING; SOLIDIFICATION; STRAIN; STRESSES; TERNARY SYSTEMS;

INDIUM GALLIUM ANTIMONIDE;

CRYSTAL GROWTH FROM MELT;

EID: 0032206767     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00621-6     Document Type: Article

References (29)

1. H.C. Casey, M.B. Panish, Heterostructure Lasers, Part B, Academic Press, New York, 1978, p. 16.
2. P.S. Dutta, H.L. Bhat, V. Kumar, J. Appl. Phys. 81 (1997) 5821.
3. T.J. Courts, C.S. Allman, J.P. Benner (Eds.), Proc. 3rd NREL Conf. on Thermophotovoltaic Generation of Electricity, Colorado Springs, CO, AIP Conf. Proc., vol. 401, New York, 1997.
4. H. Ehsani, I. Bhat, C. Hitchcock, R.J. Gutmann, G. Charache, M. Freeman, in: T.J. Courts, C.S. Allman, J.P. Benner (Eds.), Proc. 3rd NREL Conf. on Thermophotovoltaic Generation of Electricity, Colorado Springs, CO, AIP Conf. Proc., vol. 401, New York, 1997, p. 65.
5. K.J. Bachmann, F.A. Thiel, H. Schrieber Jr., Progr. Crystal Growth Characterization 2 (1979) 171.
6. J.C. Wooley, B.A. Smith, Proc. Phys. Soc. London, Sec. B 72 (1958) 214.
7. L. Pauling, The Nature of the Chemical Bond, Oxford University Press, London, 1940.
8. J.C. Wooley, B.A. Smith, D.G. Lees, Proc. Phys. Soc. London, Sec. B 69 (1956) 1339.
9. I. Ansara, M. Gambino, J.P. Bros, J. Crystal Growth 32 (1976) 101.
10. T. Ashley, J.A. Beswick, B. Cockayne, C.T. Elliot, in: J.L. Reno (Ed.), Inst. Phys. Conf. Ser. No. 144, Institute of Physics Publishing, Bristol, 1995, p. 209.
11. D. Reid, B. Lent, T. Bryskiewicz, P. Singer, E. Mortimer, W.A. Bonner, J. Crystal Growth 174 (1997) 250.
12. W.A. Bonner, B.J. Skromme, E. Berry, H.L. Gilchrist, R.E. Nahory, Inst. Phys. Conf. Ser. No. 96, GaAs and Related Compounds, ch. 5, 1989, p. 337.
13. W.A. Bonner, R.E. Nahory, H.L. Gilchrist, E. Berry, Semi-Insulating III-V Materials, 1990, p. 199.
14. A. Tanaka, A. Watanabe, M. Kimura, T. Sukegawa, J. Crystal Growth 135 (1994) 269.
15. J.P. Garandet, T. Duffar, J.J. Favier, J. Crystal Growth 106 (1990) 426.
16. A.G. Ostrogorsky, J. Crystal Growth 104 (1990) 233.
17. A.G. Ostrogorsky, G. Muller, J. Crystal Growth 137 (1994) 64.
18. S. Meyer, A.G. Ostrogorsky, J. Crystal Growth 171 (1997) 566.
19. P.S. Dutta, A.G. Ostrogorsky, R.J. Gutmann, in: T.J. Coutts, C.S. Allman, J.P. Benner (Eds.), Proc. NREL Conf. on Thermophotovoltaic Generation of Electricity, Colorado Springs, CO, AIP Conf. Proc., vol. 401, New York, 1997, p. 157.
20. R.A. Laudise, The Growth of Single Crystals, Prentice-Hall, Englewood Cliffs, NJ, 1970.
21. H.J. Scheel, E.O. Schultz-Dubois, J. Crystal Growth 8 (1971) 304.
22. D. Elwell, H.J. Scheel, Crystal Growth from High Temperature Solution, Academic Press, London, 1975.
23. P. Capper, J.J. Gosney, C.L. Jones, E.J. Pearce, J. Electron. Mater. 15 (1972) 361.
24. W.G. Pfann, D. Dorsi, Rev. Sci. Instr. 28 (1957) 720.
25. B. Langenecker, W.H. Frandsen, Philos. Magn. 7 (1962) 2079.
26. A.S. Borschchevskii, D.N. Tretjakov, Kristall und Technik 34 (1968) 69.
27. A.F. Witt, H.C. Gatos, J. Electrochem. Soc. 114 (1967) 413.
28. W.S. Liu, M.F. Wolf, D. Elwell, R.S. Feigelson, J. Crystal Growth 82 (1987) 589.
29. Y.C. Lu, J.J. Shiau, R.S. Feigelson, R.K. Route, J. Crystal Growth 102 (1990) 807.