Melt mixing of the 0.3In/0.7GaSb/0.3Sb solid combination by diffusion under microgravity

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3613-3619

  Okitsu, Kazuhiko ^a   Hayakawa, Yasuhiro ^a   Yamaguchi, Tomuo ^a   Hirata, Akira ^b   Fujiwara, Syogo ^b   Okano, Yasunori ^a   Imaishi, Nobuyuki ^c   Yoda, Shin Ichi ^d   Oida, Toshihiko ^d   Kumagawa, Masashi ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

^d JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Convection; Crystal growth; Diffusion; Distribution of indium; Growth morphology; InGaSb; Melt mixing; Microgravity; Ternary semiconductor

Indexed keywords

DIFFUSION COEFFICIENT; INDIUM CONCENTRATION DISTRIBUTION; MELT MIXING; TERNARY SEMICONDUCTOR;

CRYSTAL GROWTH; DIFFUSION; HEAT CONVECTION; MICROGRAVITY PROCESSING; MIXING; MORPHOLOGY; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR MATERIALS;

EID: 0031166862     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3613     Document Type: Article

References (6)

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