Rapid and high concentrated permeation of Ga into InSb

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 301-303

  Kumagawa, M ^a   Ohtsu, H ^a   Hamakawa, E ^a   Koyama, T ^a   Masaki, M ^b   Takahashi, K ^b   Lifshits, V G ^c   Hayakawa, Y ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b IHI CORPORATION   (Japan)

^c INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

Author keywords

Crystal growth; Gallium permeation; Liquid phase epitaxy

Indexed keywords

CRYSTAL GROWTH; DIFFUSION IN SOLIDS; LIQUID PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

GALLIUM PERMEATION;

SEMICONDUCTING GALLIUM;

EID: 0000753742     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01798-9     Document Type: Article

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