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Journal of Crystal Growth

Volumn 163, Issue 3, 1996, Pages 220-225

Rapid diffusion of Ga into InSb and precipitation of In

(4) Hayakawa, Yasuhiro a Hamakawa, Emi a Koyama, Tadanobu a Kumagawa, Masashi a

a SHIZUOKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPOSITION; DIFFUSION; PRECIPITATION (CHEMICAL); SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; SOLUTIONS; SUBSTRATES; THERMAL EFFECTS;

GALLIUM COMPOSITIONAL PROFILE; ROTARY BRIDGMAN METHOD;

SEMICONDUCTOR GROWTH;

EID: 0030164236 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00977-9 Document Type: Article

Times cited : (11)

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