A transient solution of the Boltzmann equation exposes energy overshoot in semiconductor devices

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 468-475

  Lin, Chung Kai ^a   Goldsman, Neil ^a   Mayergoyz, Isaak D ^a   Chang, Chien Hwa ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342696276     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370754     Document Type: Article

References (17)

1. G.-C. Tai, C. E. Korman, and I. D. Mayergoyz, Solid-State Electron. 37, 1387 (1994).
2. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Wien, 1984).
3. M. Patil and U. Ravaioli, Solid-State Electron. 34, 1029 (1991).
4. U. Ravaioli, M. Patil, and C. Lee, Mathematical and Computer Modelling 23, 167 (1996).
5. M. C. Vecchi, J. Mohring, and M. Rudan, IEEE Trans. Comput.-Aided Des. 16, 353 (1997).
6. M. C. Vecchi and M. Rudan, IEEE Trans. Electron Devices 45, 230 (1998).
7. W. Liang, N. Goldsman, I. Mayergoyz, and P. Oldiges, IEEE Trans. Electron Devices 44, 257 (1997).
8. C.-H. Chang, C.-K. Lin, W. Liang, N. Goldsman, I. D. Mayergoyz, P. Oldiges, and J. Melngailis, in SISPAD Conference Proceedings, 1997, pp. 225-228.
9. H. Lin, N. Goldsman, and I. D. Mayergoyz, Solid-Stale Electron. 35, 33 (1992).
10. N. Goldsman, L. Henrickson, and J. Frey, Solid-State Electron. 34, 389 (1991).
11. A. Gnudi, D. Ventura, G. Baccarani, and F. Odeh, Solid-State Electron. 36, 575 (1993).
12. N. Goldsman, Y.-J. Wu, and J. Frey, J. Appl. Phys. 68, 1075 (1990).
13. K. A. Hennacy, Y.-J. Wu, N. Goldsman, and I. D. Mayergoyz, Solid-State Electron. 38, 1498 (1995).
14. A. Gnudi, D. Ventura, and G. Baccarani, IEEE Trans. Comput.-Aided Des. 12, 1706 (1993).
15. Y.-J. Wu and N. Goldsman, J. Appl. Phys. 78, 5174 (1995).
16. C. Fiegna and E. Sangiorgi, IEEE Trans. Electron Devices 40, 619 (1993).
17. S. Singh, N. Goldsman, and I. Mayergoyz, Solid-State Electron. 39, 1695 (1996).