Spherical harmonic modeling of a 0.05 μm base BJT: A comparison with Monte Carlo and asymptotic analysis

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 147-151

  Chang, C H ^a   Lin, C K ^a   Goldsman, N ^a   Mayergoyz, I D ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Boltzmann; Device Modeling; Monte Carlo; Simulation; Spherical Harmonic

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS;

BOLTZMANN TRANSPORT EQUATION (BTE); SPHERICAL HARMONIC (SH) METHOD;

BIPOLAR TRANSISTORS;

EID: 0032314819     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/59191     Document Type: Review

References (5)

1. Hennacy, K. A., Wu, Y.-J., Goldsman, N. and Mayergoyz, I. D. (1995). "Deterministic MOSFET Simulation using a Generalized Spherical Harmonic Expansion of the Boltzmann Equation", Solid-State Electronics, 38, 1498-1495.
2. Liang, W., Goldsman, N., Mayergoyz, I. and Oldsiges, P. (1997). "2-dMOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson and hole-continuity equations", IEEE Transactions on Elec. Dev., 44, 257-276.
3. Gnudi, A., Ventura, D. and Baccarani, G. (1993). "Modeling Impact Ionization in a BJT by Means of Spherical Harmonics Expansion of the Boltzmann Transport Equation", IEEE Transactions on CAD, 12, 1706.
4. Bude, J., Fischetti, M. and Laux, S. (1996). Independent private communications.
5. Dutton, R., Hess, K. and Ravaioli, U. (1996). Independent private communications.