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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1039-1043

Molecular beam epitaxial growth of GaN on (0001) Al2O3 using an ultrathin amorphous buffer layer deposited at low temperature

(2) Kimura, Ryuhei a Takahashi, Kiyoshi a

a TEIKYO UNIVERSITY OF SCIENCE (Japan)

Author keywords

Epitaxy; Gan; Initial nucleation; Molecular beam epitaxy; Sapphire; Thin film

Indexed keywords

AMORPHOUS MATERIALS; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ETCHING; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; NUCLEATION; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THIN FILMS;

GALLIUM NITRIDE; INITIAL NUCLEATION; ULTRATHIN AMORPHOUS BUFFER LAYER; X RAY ROCKING CURVES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033731388 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.1039 Document Type: Article

Times cited : (11)

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