GaAsSbN: A material for 1.3-1.55 μm emission

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 553-556

  Ungaro, G ^a   Sagnes, I ^a   Le Roux, G ^a   Largeau, L ^a   Patriarche, G ^a   Saint Girons, J ^a   Harmand, J C ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE ANTIMONY NITRIDE;

ANNEALING; ELECTROLUMINESCENCE; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033726377     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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2. M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa and M. Okai, ' Room-temperature pulsed operation of GaInAsN laser diodes with excellent high temperature performance', Jpn. J. Appl. Phys. 35, pp. 5711-5713 (1996)
3. S. Sato and S. Satoh, ' Room-temperature pulsed operation of strained GaInAsNjGaAs double quantum well laser diode grown by metal organic chemical vapour deposition', Electron. Lett. 34 (15), pp. 1495-1497 (1998).
4. G. Ji, S. Agarwala, D. Huang, J. Chyi and H Markoq 'Band lineup in GaAsSb/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy', Phys. Rev. B 38(15), pp. 10571-10577 (1988)
5. D.J. Friedman, J.F. Geisz, S.R. Kurtz, J.M. Olson, R. Reedy, 'Nonlinear dependence of N incorporation on In content in GaInAsN', J. Cryst.Growth 195, pp. 438-443 (1998)
6. H. Saito, T. Makimoto, N. Kobayashi, 'MOVPE growth of strained InGaAsN1 GaAs quantum wells', J. Cryst. Growth 195, pp. 416-420 (1998)
7. x layers : influence of post-growth treatments', Appl. Phys. Lett. 72, (12), pp. 1409-1411 (1998)
8. T. Kitatani, K. Nakahara, M. Kondow, K. Uomi and T. Tanaka, ' Mechanism analysis of improved GaInAsN optical properties through thermal annealing', J. Cryst.Growth 209, pp. 345-349 (2000)