Content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Thin Solid Films

Volumn 368, Issue 2, 2000, Pages 237-240

  Sun, X L ^a   Wang, Y T ^b   Yang, Hui ^b   Li, J B ^b   Zheng, L X ^b   Xu, D P ^b   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL LATTICES; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

CUBIC GALLIUM NITRIDE; HEXAGONAL PHASE INCLUSIONS; X RAY DOUBLE CRYSTAL DIFFRACTION; X RAY RECIPROCAL SPACE MAPPING;

THIN FILMS;

EID: 0033725967     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00772-0     Document Type: Article

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