Defect-induced island formation in CdSe/ZnSe structures

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 727-731

  Shubina, T V ^a   Sitnikova, A A ^a   Solov'Ev, V A ^a   Toropov, A A ^a   Sedova, I V ^a   Ivanov, S V ^a   Keim, M ^b   Waag, A ^b   Landwehr, G ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; MONOLAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CADMIUM SELENIDE; DEFECT INDUCED ISLAND FORMATION; LATTICE MISMATCH; ZINC SELENIDE;

MOLECULAR BEAM EPITAXY;

EID: 0033723875     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00188-3     Document Type: Article

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