Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 481-485

  Solov'ev, V A ^a   Sorokin, S V ^a   Sedova, I V ^a   Mosina, G N ^a   Ivanov, S V ^a   Lugauer, H J ^b   Reuscher, G ^b   Keim, M ^b   Waag, A ^b   Landwehr, G ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL RELAXATION; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; MONOLAYERS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; STACKING FAULTS;

EPILAYERS; FRACTIONAL MONOLAYERS; NONRADIATIVE RECOMBINATION CENTERS;

MOLECULAR BEAM EPITAXY;

EID: 0032656271     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01381-5     Document Type: Article

References (9)

1. Ishibashi A. J. Crystal Growth. 159:1996;555.
2. Guha S., DePuydt J.M., Qiu J., Hofler G.E., Haase M.A., Wu B.J., Cheng H. Appl. Phys. Lett. 63:1993;3023.
3. Guha S., Cheng H., Haase M.A., DePuydt J.M., Qiu J., Wu B.J., Hofler G.E. Appl. Phys. Lett. 65:1994;801.
4. Lin H.T., Rich D.H., Wittry D.B. J. Appl. Phys. 75:1994;8080.
5. Kuo L.H., Salamanca-Riba L., Wu B.J., Hofler G., DePuydt J.M., Cheng H. Appl. Phys. Lett. 67:1995;3298.
6. Waag A., Fisher F., Schüll K., Baron T., Lugauer H.-J., Litz Th., Zehnder U., Ossau W., Gerhard T., Keim M., Reuscher G., Landwehr G. Appl. Phys. Lett. 70:1997;1.
7. Ivanov S., Sorokin S., Krestnikov I., Faleev N., Ber B., Sedova I., Kop'ev P. J. Crystal Growth. 184/185:1998;70.
8. S.V. Ivanov, R.N. Kyutt, G.N. Mosina, L.M. Sorokin, S.V. Sorokin, P.S. Kop'ev, Proc. 23rd Int. Symp. Compound Semiconductors, St. Petersburg, 1996, Inst. Phys. Conf. Ch. 3, Ser. No. 155, 1997, p. 223.
9. A.A. Toropov, S.V. Ivanov, T.V. Shubina, S.V. Sorokin, A.V. Lebedev, A.A. Sitnikova, P.S. Kop'ev, M. Willander, G. Posina, J.P. Bergman, B. Monemar, Proc. Int. Symp. Formation, Physics and Device Application of Quantum Dot Structures, 1998, Sapporo, Jpn. J. Appl. Phys., to be published.