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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7177-7181

Self-organizing process of moderately strained Zn1-xCdxSe layer grown on GaAs(110) by molecular beam epitaxy

(2) Ko, Hyun Chul a,b Fujita, Shigeo a

a KYOTO UNIVERSITY (Japan)

b NEC CORPORATION (Japan)

Author keywords

GaAs(110); MBE; Ridge structure; Self organization; Zn1 xCdxSe

Indexed keywords

EID: 0342834318 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.7177 Document Type: Article

Times cited : (1)

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