Cubic GaN light emitting diode grown by metalorganic vapor-phase epitaxy

IEICE Transactions on Electronics

Volumn E83-C, Issue 4, 2000, Pages 585-590

  Tanaka, Hidenao ^a   Nakadaira, Atsushi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Cubic gan; Light emitting diode; Mg doping; P n junction; Si doping

Indexed keywords

ELECTRODES; ELECTROLUMINESCENCE; ELECTRON BEAMS; ENERGY GAP; HETEROJUNCTIONS; MAGNESIUM; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

CUBIC GALLIUM NITRIDE LIGHT EMITTING DIODE; ELECTRON BEAM INDUCED CURRENT; MAGNESIUM DOPING; SILICON DOPING;

LIGHT EMITTING DIODES;

EID: 0033715362     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. A.Nakadaira and H.Tanaka, "Growth of zinc-blende GaN on GaAs (100) substrates at high temperature using low-presure MOVPE with low V/1II molar ratio," J. Electronic Materials, vol.26, no.3, pp.320-324, 1997.
2. A.Nakadaira and H.Tanaka, "Metalorganic vapor-phase epitaxial growth and characterization of cubic AlxGa, XN alloy on a GaAs (100) substrate," Appl. Phys. Lett., vol.70, no.!9,pp.2720-2722. May 1997.
3. A.Nakadaira and H.Tanaka, "Metalorganic vapor-phase epitaxy of cubic AI^Ga,
4. A.Nakadaira and H.Tanaka, "Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy," Appl. Phys. Lett., vol.71, no.ll,pp.812-814, Aug. 1997.
5. A.Nakadaira and H.Tanaka, "Optically pumped stimulated emission from cubic GaN/AIGaN double heterostructure grown on GaAs (100) using metalorganic vapor-phase epitaxy," J. Cryst. Growth, vol. 189/190, pp.411-414, 1998.
6. H.Tanaka and A.Nakadaira, "Growth and characterization of Si-doped cubic GaN," Inst. Phys. Conf. Ser., no. 162, pp.669674, 1999.
7. A.Nakadaira and H.Tanaka, "Photoluminescence from Mg-doped cubic GaN grown by MOVPE," Inst. Phys. Conf. Ser., no. 162, pp.757-762, 1999.
8. H.Tanaka and A.Nakadaira, "EL spectra from a p-n junction diode made of cubic GaN," Extended Abstracts (The 46th Spring Meeting) The Japan Society of Applied Physics and Related Societies, p.429, March 1999.
9. H.Yang, L.X.Zheng, J.B.Li, X.J.Wang, D.P.Xu, Y.T.Wang, X.W.Hu, and P.D.Han, "Cubic-phase GaN light-emitting diodes," Appl. Phys. Lett., vol.74, no. 17, pp.2498-2500, April 1999.
10. H.Tsuchiya, K.Sunaba, S.Yonemura, T.Suemasu, and F.Hasegawa, "Cubic dominant GaN growth on (001 ) GaAs substrates by hydride vapor phase epitaxy," Jpn. J. Appl. Phys., vol.36, no.lA/B, pp.Ll-L3, Jan. 1997.
11. Y.Ohuchi, K.Tadatomo, H.Nakayama, N.Kaneda, T.Detchprohm, K.Hiramatsu, and N.Sawaki, "New dopant precursors for n-type and p-type GaN," J. Cryst. Growth, vol. 170, no.l,pp.325-328, 1997.
12. A.S.Barkerand M.Ilegems, "Infrared lattice vibrations and freeelectron dispersion in GaN," Phys. Rev. B, vol.7, no.2, pp.743750, Jan. 1973.