Effects of interface-trapped charge on the SiC MOSFET characteristics

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 23-28

  Scozzie, C J ^a   McGarrity, J M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER MOSFET;

DEVICE CHARACTERISTICS; INTERFACE TRAP DENSITY; INTERFACE TRAPPED CHARGES; INTERFACE TRAPS; MOS CONTROLLED THYRISTOR; SIC/SIO2-INTERFACES; STRESS CHANGES; STRESS-INDUCED;

SILICON CARBIDE;

EID: 84861450305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676755     Document Type: Conference Paper

References (8)

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