Carrier emission processes in InAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 388-392

  Kapteyn, C M A ^a   Lion, M ^a   Heinrichdorff, F ^a   Heitz, R ^a   Grundmann, M ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

INDIUM ARSENIDE; TIME-RESOLVED CAPACITANCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033703186     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00347-1     Document Type: Article

References (36)

1. Ashoori R.C., Stormer H.L., Weiner J.S.et al. Phys. Rev. Lett. 68:1992;3088.
2. Bimberg D., Grundmann M., Ledentsov N.N. Quantum Dot Heterostructures. 1998;Wiley, Chichester.
3. Stranski I.N., Krastanow L. Sitzungsber. der Akad. der Wiss. Wien. 146:1938;797.
4. Eagleshamm D.J., Cerullo M. Phys. Rev. Lett. 64:1990;1943.
5. Leonard D., Pond K., Petroff P.M. Phys. Rev. B. 50:1994;11 687.
6. Mukhametzhanov I., Heitz R., Zeng J.et al. Appl. Phys. Lett. 73:1998;1841.
7. Arakawa Y., Sakaki H. Appl. Phys. Lett. 40:1982;939.
8. D. Bimberg, N. Kirstaedter, N.N. Ledentsov et al., IEEE J. Sel. Topics in Quantum Electron. 3 (1997) 196.
9. Heinrichsdorff F., Mao M.-H., Kirstaedter N.et al. Appl. Phys. Lett. 71:1997;22.
10. Campbell J.C., Huffaker D.L., Deng H.et al. Electron. Lett. 33:1997;1337.
11. Muto S. J. Appl. Phys. 34:1995;210.
12. Yusa G., Sakaki H. J. Appl. Phys. 70:1997;345.
13. Finley J.J., Skalitz M., Arzberger M.et al. Appl. Phys. Lett. 73:1998;2618.
14. Drexler H., Leonard D., Hansen W.et al. Phys. Rev. Lett. 73:1994;2252.
15. Medeiros-Ribeiro G., Leonard D., Petroff P.M. Appl. Phys. Lett. 66:1995;1767.
16. Anand S., Carlsson N., Pistol M.-E.et al. Appl. Phys. Lett. 67:1995;3016.
17. Anand S., Carlsson N., Pistol M.-E.et al. J. Appl. Phys. 84:1998;3747.
18. Brunkov P.N., Polimeni A., Stoddart S.T.et al. Appl. Phys. Lett. 73:1998;1092.
19. Zhang S.K., Zhu H.J., Lu F.et al. Phys. Rev. Lett. 80:1998;3340.
20. Grundmann M., Stier O., Bimberg D. Phys. Rev. B. 52:1995;11 969.
21. Wang L.-W., Kim J., Zunger A. Phys. Rev. B. 59:1999;5678.
22. Stier O., Grundmann M., Bimberg D. Phys. Rev. B. 59:1999;5688.
23. Lang D.V. J. Appl. Phys. 45:1974;3023.
24. Blood P., Orton J.W. The Electrical Characterization of Semiconductors: Majority Carriers and Electron States. 1992;Academic Press, London.
25. Letartre X., Stievenard D., Lanoo M. J. Appl. Phys. 69:1991;7336.
26. Ashoori R.C., Stormer H.L., Weiner J.S.et al. Phys. Rev. Lett. 71:1993;613.
27. Medeiros-Ribeiro G., Pikus F.G., Petroff P.M.et al. Phys. Rev. B. 55:1997;1568.
28. Miller B.T., Hansen W., Manus S.et al. Phys. Rev. B. 56:1997;6764.
29. Luyken R.J., Lorke A., Govorov A.O.et al. J. Appl. Phys. 74:1999;2486.
30. C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier et al., Phys. Rev. B 60 (1999) 14265.
31. C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier et al., 24th International Conference on Physics of Semiconductors, World Scientific, Singapore, (1999) paper 1339.
32. Heinrichsdorff F., Krost A., Grundmann M.et al. Appl. Phys. Lett. 68:1996;3284.
33. Ledentsov N.N., Shchukin V.A., Grundmann M.et al. Phys. Rev. B. 54:1996;8743.
34. R. Wetzler et al. 1999, in preparation.
35. Dabrowski J., Scheffler M. Phys. Rev. B. 40:1989;10 391.
36. Vincent G., Chantre A., Bois D. J. Appl. Phys. 50:1979;5484.