Current filamentation in n-GaAs thin films with different contact geometries

Semiconductor Science and Technology

Volumn 15, Issue 6, 2000, Pages 593-603

  Schwarz, G ^a   Lehmann, C ^a   Reimann, A ^a   Scholl E ^a   Hirschinger, J ^b   Prettl, W ^b   Novak V ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; LOW TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETIC HYSTERESIS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM ARSENIDE; SPATIAL VARIABLES CONTROL;

APPLIED BIAS; CONTACT GEOMETRIES; CURRENT FILAMENTATION; DYNAMIC MICROSCOPIC MODEL; LOAD RESISTANCE; LOW TEMPERATURE IMPURITY BREAKDOWN;

SEMICONDUCTING FILMS;

EID: 0033700451     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/6/319     Document Type: Article

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