Current filamentation in point contact geometry and its 2D stationary model

Semiconductor Science and Technology

Volumn 13, Issue 7, 1998, Pages 756-761

  Novak V ^a   Hirschinger, J ^b   Prettl, W ^b   Niedernostheide, F J ^c  

^a INSTITUTE OF MATHEMATICS   (Czech Republic)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY VALUE PROBLEMS; CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; LAPLACE TRANSFORMS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

ELECTRIC FIELD STRENGTH; EPITAXIAL LAYER; FILAMENTARY CURRENT FLOW; LAPLACE FREE BOUNDARY PROBLEM;

POINT CONTACTS;

EID: 0032118614     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/7/016     Document Type: Article

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