Low-temperature impurity breakdown in semiconductors: An approach towards efficient device simulation

Solid-State Electronics

Volumn 39, Issue 8, 1996, Pages 1155-1164

  Kunz, R E ^a   Scholl E ^a   Nurnberg R ^b   Gajewski, H ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; CRYSTAL IMPURITIES; ELECTRIC FIELDS; LOW TEMPERATURE PHENOMENA; MONTE CARLO METHODS; SEMICONDUCTOR MATERIALS; SWITCHING;

CURRENT FILAMENTS; DEVICE SIMULATION; DRIFF DIFFUSION; GENERATION RECOMBINATION PROCESSES; IMPACT IONIZATION BREAKDOWN; LOW TEMPERATURE IMPURITY BREAKDOWN; SPATIO-TEMPORAL DYNAMICS;

ELECTRIC BREAKDOWN;

EID: 0030213589     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00009-3     Document Type: Review

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