Current filamentation in n-GaAs samples with different contact geometries

Acta Technica CSAV (Ceskoslovensk Akademie Ved)

Volumn 42, Issue 6, 1997, Pages 661-667

  Hirschinger, Jürgen ^a   Niedernostheide, Franz Josef ^a,e   Prettl, Wilhelm ^a   Novák, Vít ^b   Cukr, Miroslav ^c   Oswald, Jiří ^c   Kostial, Helmar ^d  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b INSTITUTE OF MATHEMATICS   (Czech Republic)

^c INSTITUTE OF PHYSICS   (Czech Republic)

^d PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^e UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

Avalanche ionization; Current filament; Impurity breakdown; Nonlinear transport

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; IONIZATION OF SOLIDS; LOW TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; POINT CONTACTS;

AVALANCHE IONIZATION; CURRENT FILAMENTATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031346383     PISSN: 00017043     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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