Spatial structure of impact-ionization-induced current filaments in n-GaAs films

Semiconductor Science and Technology

Volumn 11, Issue 11, 1996, Pages 1646-1655

  Gaa, M ^a   Kunz, R E ^a   Scholl E ^a   Eberle, W ^b   Hirschinger, J ^b   Prettl, W ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EXPERIMENTS; LOW TEMPERATURE OPERATIONS; PHOTOLUMINESCENCE; SPATIAL VARIABLES MEASUREMENT;

INDUCED CURRENT FILAMENTS; SPATIAL STRUCTURE; TWO-DIMENSIONAL SPATIAL DOMAIN YIELD;

THIN FILMS;

EID: 0030283383     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/11/003     Document Type: Article

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