Potential profile measurement of cleaved surface of GaAs HEMTs by Kelvin probe force microscopy

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 31-34

  Mizutani, Takashi ^a   Arakawa, Masashi ^a   Kishimoto, Shigeru ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PROBES; SEMICONDUCTING GALLIUM; ELECTRIC VARIABLES MEASUREMENT; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES; VOLTAGE MEASUREMENT;

CLEAVED SURFACES; DEPTH-PROFILE; GAAS HEMT; HIGH-FIELD REGIONS; KELVIN PROBE FORCE MICROSCOPY; MEASURED DEPTHS; MEASUREMENTS OF; POTENTIAL PROFILES; PROFILE MEASUREMENT; TWO-DIMENSIONAL;

III-V SEMICONDUCTORS; HIGH ELECTRON MOBILITY TRANSISTORS;

BIAS VOLTAGE; KELVIN PROBE FORCE MICROSCOPY; POTENTIAL PROFILE; TWO DIMENSIONAL;

EID: 0030387437     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553115     Document Type: Conference Paper

References (7)

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