Shallow junction formation by decaborane molecular ion implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 445-449

  Foad, Majeed A ^a   Webb, Roger ^b   Smith, Roger ^c   Matsuo, Jiro ^d   Al Bayati, Amir ^a   T Sheng Wang, ^e   Cullis, Tony ^e  

^a APPLIED MATERIALS INC   (United States)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c LOUGHBOROUGH UNIVERSITY   (United Kingdom)

^d KYOTO UNIVERSITY   (Japan)

^e UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; HYDROGEN; ION IMPLANTATION; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DECABORANES; MOLECULAR ION IMPLANTATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0033697649     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591245     Document Type: Article

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