Analysis of sub-1 keV implants in silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP low energy, high current implanter evaluated

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 603-606

  Foad, Majeed A ^a   England, Jonathan G ^a   Moffatt, Steve ^a   Armour, David G ^a  

^a Applied Materials   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; PROBES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

BEAM ENERGIES; LOW ENERGY ADVANCE PROCESS; MEDIUM ENERGY ION SCATTERING SPECTROSCOPY (MEISS);

ION IMPLANTATION;

EID: 0030350938     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)